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SUV85N10-10
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _ C UNLESS NOTED)
2.5
2.0
On-Resistance vs. Junction Temperature
V GS = 10 V
I D = 30 A
100
Source-Drain Diode Forward Voltage
1.5
10
T J = 150 _ C
T J = 25 _ C
1.0
0.5
0.0
1
- 50
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1000
T J - Junction Temperature ( _ C)
Avalanche Current vs. Time
140
V SD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
100
10
I AV (A) @ T A = 150 _ C
I AV (A) @ T A = 25 _ C
130
120
110
I D = 250 m A
1
100
0.1
90
0.00001
0.0001
0.001
0.01
0.1
1
- 50
- 25
0
25
50
75
100
125
150
175
www.vishay.com
4
t in (Sec)
T J - Junction Temperature ( _ C)
Document Number: 72039
S-03601—Rev. B, 31-Mar-03
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